IXYS' power MOS product lines include power metal-oxide semiconductor field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs) and BIMOSFETs.  IXYS' power MOSFETs are used in large power conversion systems and applications from 60 to 4,000 volts. Its IGBTs are used in alternating current motor drives, power systems and defibrillators. Bipolar products include rectifiers, thyristors and GTOs.

Ignition IGBTs

Ignition Insulated Gate Bipolar Transistors - Ignition IGBTs

IXYS' Ignition Insulated Gate Bipolar Transistor (Ignition IGBT) technology features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications.

Discrete Packaged IGBTs

Discrete IGBTs Power Semiconductors

Choose from the largest selection of IGBT devices on the power semiconductor market. Benefits include low energy losses and exceptional device ruggedness while maintaining low on-state voltages.

IGBT Modules

IGBT Modules

Littelfuse IGBT modules ensure high efficiency and fast switching by combining the MOSFET gate-control structure with the high current and low saturation voltage characteristics of BJTs.

Do you know more about IXYS's product uses, technical documents, and solutions related to IGBTs? Then quickly get in touch with IXYS (Littelfuse) Distributor - NHE!